Gaas Fet Transistor

Designed for use in driver stages of moderate power RF amplifiers to 2 GHz. Typical applications are cellular radios and personal communication transmitters such as AMPS, ETACS, NMT, GSM, PCN, JDC and DECT. Performance Specifications at 900 MHz, 5.8 V: Output Power = 21 dBm Power Gain 14 dB Min Drain Efficiency = 55% Min Plastic Surface Mount Package Order MRF9811T1 for Tape and Reel Packaging. T1 Suffix = 3,000 Units per 8 mm, 7 inch Reel.

Rating Drain­Source Voltage Gate­Source Voltage Drain Current Continuous Total Device Dissipation = 50°C Derate above 50°C Storage Temperature Range Operating Junction Temperature Symbol VDSS VGS ID PD Tstg TJ Value to +150 Unit Vdc Adc W mW/°C °C

Gate­Drain Breakdown Voltage (IGD = 0.25 mA, Source Open) Zero Gate Voltage Drain Current (VDS = 1.5 Vdc, VGS = 0) Gate­Source Leakage Current (VGS = ­5.0 Vdc, Drain Open) V(BR)GDO IDSS IGSO Vdc Adc µAdc

NOTE ­ CAUTION ­ MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed.

Gate Threshold Voltage (VDS = 5.8 Vdc, 0.25 A) Forward Transconductance (VDS = 5.8 Vdc, = 30 mA) VGS(th) gfs Vdc mmhos

Common Source Output Power (VDS 5.8 V, IDQ = 30 mA, Pin = 7 dBm, = 900 MHz) Drain Efficiency (VDS 5.8 V, IDQ = 30 mA, Pin = 7 dBm, = 900 MHz) Gps dB %

BC846AWT1 : NPN Silicon General Purpose Transistor

KMC68L11E1CFN2 : M68HC11 Family M68HC11E/D M68HC11E Family Technical Data

KMC68MH360CEM25L : 68K/ColdFire->68K M683XX MC68160A Enhanced Ethernet Transceiver

MC14LC5540FU : ADPCM Codec-Filter Adpcm Codec

MC68HC16Z1CFC25 :

MC78T15BT : Three Ampere Positive Fixed Voltage Regulators

MCM32A832SG33 : 128kb/256kb Secondary Cache Module With Tag, Valid, And Dirty For I486 Processor Systems

MHW6342TN : 550 MHz, 35.2 dB Gain, 24 V 77-Channel CATV Amplifier Module Description * 24 Vdc Supply, 40 to 550 MHz, CATV Forward Amplifier * Replaced MHW6342T. There are no form, fit or function changes with this part replacement. * RoHS Compliant Applications * CATV Systems Operati

MC33596 : PLL Tuned UHF Receiver for Data Transfer Applications

KMPC860DPZQ80D4 : Powerquicc¢â Family Hardware Specifications

MC56F8167 : 16-bit Digital Signal Controllers

2N5681 : 100 V, NPN Selicon High Voltage Transistor.

3N258 : Bridge. Maximum Repetitive Reverse Voltage Maximum RMS Bridge Input Voltage DC Reverse Voltage (Rated VR) Average Rectified Forward Current, = 50°C Non-repetitive Peak Forward Surge Current Storage Temperature Range Operating Junction Temperature 10M °C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

CEB6060L : N chanel. N-channel Logic Level Enhancement Mode Field Effect Transistor.

CLLRHSeries : . CLLRH SERIES GENERAL PURPOSE RECTIFIER 0.5 AMP, 200 THRU 600 VOLTS : SUPERminiTM RECTIFIER IN A DIODE CASE HIGH CURRENT DENSITY HIGH RELIABILITY SPECIAL SELECTIONS AVAILABLE ROBUST GLASS CONSTRUCTION SUPERIOR LOT TO LOT CONSISTENCY SOD-80 CASE : The CENTRAL SEMICONDUCTOR CLLRH Series 0.5 amp leadless glass silicon rectifier is a high quality, well constructed,.

D2SB60 : General Purpose Rectifiers/ Sip Bridges. Thin Single In-Line Package High IFSM Applicable to Automatic Insertion APPLICATION Switching power supply Home Appliances, Office Equipment Telecommunication, Factory Automation Absolute Maximum Ratings (If not specified Tl=25) Item Symbol Conditions Storage Temperature Tstg Operating Junction Temperature Tj VRM Maximum Reverse Voltage IO Average Rectified.

FB10 : IF(A) = 10 ;; Ifsm (A) = 200 ;; VRRM (V) = 50 1000. Metal heat sink Epoxy case Metal heat sink Epoxy case Glass Passivated Junction UL recognized under component index file number E130180 Terminals: FASTON Terminals: WIRE LEADS Max. Mounting Torque: x cm Lead and polarity identifications High surge current capability FB1000L FB1001L VRRM VRMS VR IF(AV) Peak Recurrent ReverseVoltage (V) Maximum RMS Voltage.

MJL4281A : Power Transistor, Npn, Package: TO-3PBL (TO-264), Pins=3. Complementary NPN-PNP Silicon Power Bipolar Transistors The MJL4281A and MJL4302A are PowerBaset power transistors for high power audio. Gain Linearity from 5 A High Gain to 240 hFE = 50 (min) 8 A Low Harmonic Distortion High Safe Operation Area @ 1 Second High fT Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector-Emitter.

OM400L60CMS : 600V 400A Single Switch Hi-rel Cermod Igbt Power Module. OM400L60CMS (Tc= 25° C unless otherwise specified) Symbol Min. Typ. Max Unit OFF CHARACTERISTICS Collector Emitter Breakdown Voltage, VCE=0V Zero Gate Voltage Drain Current, VGE=0, VCE =600V Gate Emitter Leakage Current, VCE=0V ON CHARACTERISTICS Gate Threshold Voltage, VCE=VGE, IC=6mA Collector Emitter Saturation Voltage, VGE=15V, IC=400A DYNAMIC CHARACTERISTICS.

P6KE20CA : 600 Watt Transient Voltage Suppressors. Glass passivated junction. 600W Peak Pulse Power capability at Excellent clamping capability. Low incremental surge resistance. Fast response time; typically less than 1.0 ps from 0 volts to BV for unidirectional and 5.0 ns for bidirectional. Typical IR less than 1.0 µA above 10V. COLOR BAND DENOTES CATHODE ON UNIDIRECTIONAL DEVICES ONLY. NO COLOR BAND.

T2323 : Sensitive Gate Triacs 2.5 Amperes RMS 200 Thru 600 Volts. . designed primarily for ac power switching. The gate sensitivity of these triacs permits the use of economical transistorized or integrated circuit control circuits, and it enhances their use in low-power phase control and load-switching applications. Very High Gate Sensitivity Low On-State Voltage at High Current Levels Glass-Passivated Chip for Stability.

AP90T03GH : 75 A, 30 V, 0.004 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252. s: Polarity: N-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 30 volts ; rDS(on): 0.0040 ohms ; Package Type: ROHS COMPLIANT PACKAGE-3 ; Number of units in IC: 1.

CMXT2222ABK : 600 mA, 40 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR. s: Polarity: NPN ; Package Type: SUPERMINI-6.

DZ24240 : 24 V, 2 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE. s: Diode Type: VOLTAGE REGULATOR DIODE.

HAC2J103J : CAPACITOR, METALLIZED FILM, POLYPROPYLENE, 630 V, 0.01 uF, THROUGH HOLE MOUNT. s: Configuration / Form Factor: Leaded Capacitor ; Technology: Film Capacitors ; Applications: General Purpose ; Electrostatic Capacitors: Polypropylene ; Capacitance Range: 0.0100 microF ; Capacitance Tolerance: 5 (+/- %) ; WVDC: 630 volts ; Mounting Style: Through Hole.

TTB6C95N16LOF : 75 A, 1600 V, SCR. s: VDRM: 1600 volts ; VRRM: 1600 volts ; IT(RMS): 75 amps ; IGT: 150 mA ; Standards and Certifications: RoHS ; Package Type: ISOPACK-14 ; Pin Count: 14.

UMF23NTR : 100 mA, 50 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR. s: Polarity: Complementary ; Package Type: UMT6, SC-88, 6 PIN.

20SEQP100M+C : CAPACITOR, ALUMINUM ELECTROLYTIC, SOLID POLYMER, POLARIZED, 20 V, 100 uF, THROUGH HOLE MOUNT. s: Configuration / Form Factor: Leaded Capacitor ; : Polarized ; Capacitance Range: 100 microF ; Capacitance Tolerance: 20 (+/- %) ; WVDC: 20 volts ; Leakage Current: 400 microamps ; ESR: 24 milliohms ; Mounting Style: Through Hole ; Operating Temperature:.

35VB10000M : CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID, POLARIZED, 35 V, 10000 uF, THROUGH HOLE MOUNT. s: Configuration / Form Factor: Leaded Capacitor ; : Polarized ; Capacitance Range: 10000 microF ; Capacitance Tolerance: 20 (+/- %) ; WVDC: 35 volts ; Leakage Current: 10500 microamps ; Mounting Style: Through Hole ; Operating Temperature: -40 to 85 C (-40 to 185 F).